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1. 发明申请

US20070295901A1 METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM 有权
标题翻译：用于捕获离子束颗粒和聚焦离子束的方法和系统
公开(公告)号：US20070295901A1
公开(公告)日：2007-12-27
申请号：US11739934
申请日：2007-04-25
申请人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
发明人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
IPC分类号： B01D59/44
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

2. 发明申请

US20070262271A1 Ribbon beam ion implanter cluster tool 有权
标题翻译：丝带束离子注入机群集工具
公开(公告)号：US20070262271A1
公开(公告)日：2007-11-15
申请号：US11432977
申请日：2006-05-12
申请人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
发明人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译：提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个或更多的多个离子束线中的每一个的性质。负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。

3. 发明授权

US09103031B2 Method and system for growing a thin film using a gas cluster ion beam 有权
标题翻译：使用气体簇离子束生长薄膜的方法和系统
公开(公告)号：US09103031B2
公开(公告)日：2015-08-11
申请号：US12144968
申请日：2008-06-24
申请人： John J. Hautala , Michael Graf , Yan Shao , Brian S. Freer
发明人： John J. Hautala , Michael Graf , Yan Shao , Brian S. Freer
IPC分类号： C23C14/00 , C23C14/48 , H01J27/02 , C23C14/10 , C23C14/22 , H01J27/00
CPC分类号： C23C14/48 , C23C14/10 , C23C14/221 , H01J27/026 , H01J2237/0812
摘要： A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
摘要翻译：描述了在基板上形成薄膜的方法。该方法包括在减压环境中提供衬底，以及在减压环境中从加压气体混合物产生气体簇离子束（GCIB）。设置光束加速电位和光束剂量以实现高达约300埃的薄膜厚度，并且实现薄膜上表面的表面粗糙度小于约20埃。 GCIB根据光束加速电位被加速，并且根据光束剂量将加速的GCIB照射到基底的至少一部分上。通过这样做，薄膜在衬底的至少一部分上生长以获得厚度和表面粗糙度。

4. 发明授权

US08981322B2 Multiple nozzle gas cluster ion beam system 有权
标题翻译：多喷嘴气体簇离子束系统
公开(公告)号：US08981322B2
公开(公告)日：2015-03-17
申请号：US12428945
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： G21K5/04 , H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要翻译：公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层底物。多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

5. 发明授权

US08097860B2 Multiple nozzle gas cluster ion beam processing system and method of operating 有权
标题翻译：多喷嘴气体离子束处理系统及其操作方法
公开(公告)号：US08097860B2
公开(公告)日：2012-01-17
申请号：US12732818
申请日：2010-03-26
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J37/317 , H01J49/10 , H01J27/02
CPC分类号： H01J37/08 , C23C14/221 , C23C16/513 , H01J37/305 , H01J37/317 , H01J2237/0812 , H01J2237/0822 , H01J2237/0825 , H01J2237/0827
摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要翻译：描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

6. 发明授权

US08089052B2 Ion source with adjustable aperture 有权
标题翻译：离子源可调光圈
公开(公告)号：US08089052B2
公开(公告)日：2012-01-03
申请号：US12423066
申请日：2009-04-14
申请人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
发明人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
IPC分类号： H01J49/10 , H01J37/317
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/061 , H01J2237/0835
摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要翻译：一种离子注入机系统，包括用于产生离子流或离子束的离子源。离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。具有所需特性的离子提取孔覆盖室的电离区域。在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。一个替代实施例具有两个限定可调节孔的移动板部分。

7. 发明申请

US20110260250A1 Method And Manufacturing Low Leakage Mosfets And FinFets 有权
标题翻译：方法和制造低漏磁和FinFets
公开(公告)号：US20110260250A1
公开(公告)日：2011-10-27
申请号：US13174398
申请日：2011-06-30
申请人： Gayle W. Miller , Volker Dudek , Michael Graf
发明人： Gayle W. Miller , Volker Dudek , Michael Graf
IPC分类号： H01L29/78
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L29/045 , H01L29/66795 , H01L29/785
摘要： By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.
摘要翻译：通过将晶片的主平面与（100）平面而不是（110）平面对准，可以沿着（100）平面流动的初级电流形成器件。在这种情况下，设备将以大约54.7度与（111）平面相交。这个相交角度可以显着地减少沿（111）方向的应力传播/释放，从而减少缺陷以及泄漏和寄生电流。泄漏电流降低是短路源极 - 漏极结所需的位错长度变化的直接后果。通过使用这种技术，对于N沟道CMOS器件，泄漏电流降低高达两个数量级。

8. 发明申请

US20100193701A1 MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM 有权
标题翻译：多喷嘴气体离子束系统
公开(公告)号：US20100193701A1
公开(公告)日：2010-08-05
申请号：US12428945
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J27/00 , G21K1/00
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要翻译：公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层底物。多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

9. 发明申请

US20100193472A1 MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESSING SYSTEM AND METHOD OF OPERATING 有权
标题翻译：多喷嘴气体离子束加工系统及其操作方法
公开(公告)号：US20100193472A1
公开(公告)日：2010-08-05
申请号：US12732818
申请日：2010-03-26
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J37/317 , H01J37/02 , H01J37/305 , C23F1/02 , C23C14/48
CPC分类号： H01J37/08 , C23C14/221 , C23C16/513 , H01J37/305 , H01J37/317 , H01J2237/0812 , H01J2237/0822 , H01J2237/0825 , H01J2237/0827
摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要翻译：描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

10. 发明申请

US20090266997A1 ION SOURCE WITH ADJUSTABLE APERTURE 有权
标题翻译：离子源与可调节的孔
公开(公告)号：US20090266997A1
公开(公告)日：2009-10-29
申请号：US12423066
申请日：2009-04-14
申请人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
发明人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
IPC分类号： H01J3/14 , H01J27/00
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/061 , H01J2237/0835
摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要翻译：一种离子注入机系统，包括用于产生离子流或离子束的离子源。离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。具有所需特性的离子提取孔覆盖室的电离区域。在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。一个替代实施例具有两个限定可调节孔的移动板部分。

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