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1. 发明申请

US20070295901A1 METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM 有权
标题翻译：用于捕获离子束颗粒和聚焦离子束的方法和系统
公开(公告)号：US20070295901A1
公开(公告)日：2007-12-27
申请号：US11739934
申请日：2007-04-25
申请人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
发明人： Peter Kellerman , Victor Benveniste , Alexander Perel , Brian Freer , Michael Graf
IPC分类号： B01D59/44
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

2. 发明申请

US20050205807A1 In-situ monitoring on an ion implanter 有权
标题翻译：离子注入机的原位监测
公开(公告)号：US20050205807A1
公开(公告)日：2005-09-22
申请号：US10803439
申请日：2004-03-18
申请人： Alexander Perel , Lyudmila Stone , William Loizides , Victor Benveniste
发明人： Alexander Perel , Lyudmila Stone , William Loizides , Victor Benveniste
IPC分类号： G01N15/06 , G01N21/47 , G01N21/84 , G01N21/94 , G01N21/95 , H01J37/317 , H01L21/66 , H01J37/304
CPC分类号： G01N21/94 , G01N21/47 , G01N21/9501 , G01N2015/0693 , G01N2021/4702 , G01N2021/8416 , G01N2201/06113 , H01J2237/0225 , H01J2237/31701
摘要： The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.
摘要翻译：本发明涉及在植入操作期间在离子注入系统中的颗粒和其它这些特征的原位检测，以避免例如植入之前和/或之后另外消耗的另外的监测工具步骤。一个或多个这样的系统被揭示用于检测由光源（例如激光束）照射的一个或多个半导体晶片上的颗粒的散射光。该系统包括具有用于照射晶片上的点的激光器和与离子注入操作旋转相反的一对检测器（例如，PMT或光电二极管）的离子注入机。晶片传输器在固定的激光光斑下保持用于平移扫描的晶片或晶片。计算机分析从照射的晶片（工件）检测到的散射光的强度，并且还可以将检测到的光映射到唯一的位置。例如，在额外的时间和资源被消耗之前，可以在植入过程期间在晶片上识别颗粒或其它这样的污染物，并且有助于确定这些污染物的来源。此外，例如，这种颗粒的数量或尺寸的阈值分析可以提供用于关闭或反馈控制的系统互锁。

3. 发明申请

US20070044717A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 审中-公开
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20070044717A1
公开(公告)日：2007-03-01
申请号：US11544971
申请日：2006-10-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

4. 发明申请

US20050254932A1 Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights 失效
标题翻译：使用弹簧和配重的往复旋转运动的晶圆扫描系统
公开(公告)号：US20050254932A1
公开(公告)日：2005-11-17
申请号：US11099022
申请日：2005-04-05
申请人： Peter Kellerman , Victor Benveniste , Kourosh Saadatmand , Mehran Asdigha , Douglas Brown
发明人： Peter Kellerman , Victor Benveniste , Kourosh Saadatmand , Mehran Asdigha , Douglas Brown
IPC分类号： B66F9/00 , H01L21/00
CPC分类号： H01L21/67069 , H01J2237/20228 , H01J2237/31701
摘要： The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.
摘要翻译：本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。工件所在的端部执行器与晶片臂连接。旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

5. 发明申请

US20050098117A1 Segmented resonant antenna for radio frequency inductively coupled plasmas 有权
标题翻译：用于射频感应耦合等离子体的分段谐振天线
公开(公告)号：US20050098117A1
公开(公告)日：2005-05-12
申请号：US10702368
申请日：2003-11-06
申请人： William DiVergilio , Victor Benveniste , Peter Kellerman
发明人： William DiVergilio , Victor Benveniste , Peter Kellerman
IPC分类号： C23C16/00 , H01J37/08 , H01J37/32
CPC分类号： H01J37/321
摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.
摘要翻译：公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。离子淋浴系统还包括向腔室提供源气体的源气体入口。导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体。

6. 发明申请

US20060145096A1 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 有权
标题翻译：离子束扫描控制方法和系统用于离子植入均匀性
公开(公告)号：US20060145096A1
公开(公告)日：2006-07-06
申请号：US11029052
申请日：2005-01-04
申请人： Victor Benveniste , Peter Kellerman , William DiVergilio
发明人： Victor Benveniste , Peter Kellerman , William DiVergilio
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/31703
摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.
摘要翻译：提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值减小电流密度分布偏差的方程式。提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

7. 发明申请

US20070108390A1 Technique for Shaping a Ribbon-Shaped Ion Beam 有权
标题翻译：形成带状离子束的技术
公开(公告)号：US20070108390A1
公开(公告)日：2007-05-17
申请号：US11536992
申请日：2006-09-29
申请人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
发明人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
IPC分类号： H01J37/12
CPC分类号： H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要： A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要翻译：公开了一种用于成形带状离子束的技术。在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形带状离子束。

8. 发明申请

US20050098742A1 System and method for performing SIMOX implants using an ion shower 失效
标题翻译：使用离子淋浴执行SIMOX植入物的系统和方法
公开(公告)号：US20050098742A1
公开(公告)日：2005-05-12
申请号：US10762114
申请日：2004-01-21
申请人： Peter Kellerman , Victor Benveniste
发明人： Peter Kellerman , Victor Benveniste
IPC分类号： C23C16/00 , H01J37/08 , H01J37/32
CPC分类号： H01J37/321 , H01J37/08 , H01J37/3171 , H01J2237/0815 , H01J2237/083 , H01J2237/31708
摘要： An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.
摘要翻译：离子淋浴器包括可操作以在室内产生源气体离子的等离子体源，以及与腔室的顶部相关联的提取组件。提取组件可操作以从腔室的顶部提取离子。离子淋浴器还包括与室的顶部相关联的工件支撑结构，该工件支撑结构可操作以将具有朝向朝向提取组件定向的注入表面的工件固定以用于其植入。本发明的离子淋浴器有利地促进了具有高氧分数的SIMOX处理和用于下一代处理的均匀束流。

9. 发明申请

US20070262271A1 Ribbon beam ion implanter cluster tool 有权
标题翻译：丝带束离子注入机群集工具
公开(公告)号：US20070262271A1
公开(公告)日：2007-11-15
申请号：US11432977
申请日：2006-05-12
申请人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
发明人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译：提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个或更多的多个离子束线中的每一个的性质。负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。

10. 发明申请

US20110240877A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240877A1
公开(公告)日：2011-10-06
申请号：US12754318
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译：提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。间隙界面限定在冷却板和腔室的壁之间。在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。

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