专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07059817B2 Wafer handling apparatus and method 失效
公开(公告)号：US07059817B2
公开(公告)日：2006-06-13
申请号：US10307022
申请日：2002-11-27
申请人： Manny Sieradzki , Nicholas R. White
发明人： Manny Sieradzki , Nicholas R. White
IPC分类号： B65G49/07
CPC分类号： H01L21/67745 , H01L21/67155 , H01L21/67778 , Y10S414/139
摘要： A high-speed wafer-processing apparatus and method that employs a vacuum chamber having at least two wafer transport robots and a process station. The vacuum chamber interfaces with a number of single-wafer load locks that are loaded and unloaded one wafer at a time by a robot in atmosphere. Four load locks are sized to allow for a gentle vacuum cycling of each wafer without significant pumpdown delays. The robots in the vacuum chamber move wafers sequentially from one of the load locks to a process station for processing and then to another one of the load locks for unloading by the atmospheric robot.

2. 发明授权

US08124947B2 Ion implanter having combined hybrid and double mechanical scan architecture 有权
标题翻译：离子注入机具有组合的混合和双机械扫描架构
公开(公告)号：US08124947B2
公开(公告)日：2012-02-28
申请号：US12554277
申请日：2009-09-04
申请人： Manny Sieradzki , Patrick Splinter , Bo H Vanderberg
发明人： Manny Sieradzki , Patrick Splinter , Bo H Vanderberg
IPC分类号： H01J37/317 , H01J29/51 , G21K1/08
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译：提供了一种用于在多个工作范围内将离子注入工件的系统和方法。提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束由位于质量分析器下游的束扫描系统扫描，并由位于光束扫描系统下游的并联器。在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。

3. 发明授权

US07586111B2 Ion implanter having combined hybrid and double mechanical scan architecture 有权
标题翻译：离子注入机具有组合的混合和双机械扫描架构
公开(公告)号：US07586111B2
公开(公告)日：2009-09-08
申请号：US11831744
申请日：2007-07-31
申请人： Manny Sieradzki , Patrick Splinter , Bo H. Vanderberg
发明人： Manny Sieradzki , Patrick Splinter , Bo H. Vanderberg
IPC分类号： H01J37/317 , H01J29/51 , G21K1/08
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译：提供了一种用于在多个工作范围内将离子注入工件的系统和方法。提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束由位于质量分析器下游的束扫描系统扫描，并由位于光束扫描系统下游的并联器。在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。

4. 发明申请

US20090032726A1 ION IMPLANTER HAVING COMBINED HYBRID AND DOUBLE MECHANICAL SCAN ARCHITECTURE 有权
标题翻译：具有组合混合和双机械扫描架构的离子植绒
公开(公告)号：US20090032726A1
公开(公告)日：2009-02-05
申请号：US11831744
申请日：2007-07-31
申请人： Manny Sieradzki , Patrick Splinter , Bo H. Vanderberg
发明人： Manny Sieradzki , Patrick Splinter , Bo H. Vanderberg
IPC分类号： H01J37/20
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译：提供了一种用于在多个工作范围内将离子注入工件的系统和方法。提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束被位于质量分析器下游的束扫描系统扫描，并由位于光束扫描系统下游的并联器。在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。

5. 发明授权

US5834786A High current ribbon beam ion implanter 失效
标题翻译：高电流带状束离子注入机
公开(公告)号：US5834786A
公开(公告)日：1998-11-10
申请号：US761065
申请日：1996-12-05
申请人： Nicholas R. White , Manny Sieradzki
发明人： Nicholas R. White , Manny Sieradzki
IPC分类号： H01J37/304 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/055 , H01J2237/14
摘要： A compact high current broad beam ion implanter employs a high current density source, a bending magnet to steer the beam and straighten trajectories, and a multipole unit extending across the beam path to tailor a precise one-dimensional beam current distribution which yields a uniform implantation dose with a possibly non-uniform workpiece transport assembly. In one embodiment, the multipole unit is a separate magnet assembly positioned adjacent to a output face of the bending magnet, and includes one or more ranks of closely-spaced pole elements, controlled so the drive current or position of each pole element is varied to affect a narrow band of the beam passing over that element. In another embodiment, the bending magnet is an analyzing magnet which directs a desired species through a resolving slit, and a second magnet deflects the resultant beam while rendering it parallel and further correcting it along its width dimension. As with the first embodiment, multipole elements are adjusted to fit the derived profile. Both magnets preferably have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. The multipole elements are adjacent to or incorporated in the dipoles, preferably at a downstream side, and operate to shift beam power along the width dimension, locally adjusting the beam current density to achieve the desired profile. A separate multipole array, such as an electromagnet with blade poles oriented at progressive angles may adjust the entrance beam.
摘要翻译：紧凑型大电流宽光束离子注入机采用高电流密度源，弯曲磁铁来控制光束和拉直轨迹，以及跨过光束路径延伸的多极单元，以定制精确的一维光束电流分布，产生均匀的注入剂量与可能不均匀的工件传输组件。在一个实施例中，多极单元是与弯曲磁体的输出面相邻定位的单独的磁体组件，并且包括一个或多个紧密间隔的极元件等级，被控制使得每个磁极元件的驱动电流或位置变化为影响通过该元件的光束的窄带。在另一个实施例中，弯曲磁体是分析磁体，其通过分辨狭缝引导期望的物质，并且第二磁体使所得到的光束平行并使其沿其宽度尺寸进一步校正。与第一实施例一样，调节多极元件以适合导出的轮廓。两个磁体优选地具有相对较大的极间隙，宽的输入和输出面，并且通过小的曲率半径偏转以产生没有不稳定性的光束。多极元件与偶极子相邻或并入其中，优选地在下游侧，并且用于沿着宽度尺寸移动光束功率，局部地调整光束电流密度以实现期望的分布。单独的多极阵列，例如具有以渐进角度定向的叶片极的电磁体可以调节入射光束。

6. 发明授权

US5486080A High speed movement of workpieces in vacuum processing 失效
标题翻译：真空加工中工件的高速运动
公开(公告)号：US5486080A
公开(公告)日：1996-01-23
申请号：US269159
申请日：1994-06-30
申请人： Manny Sieradzki
发明人： Manny Sieradzki
IPC分类号： B65G49/07 , B01J3/02 , H01L21/00 , H01L21/02 , H01L21/677 , H01L21/687 , B65G1/04
CPC分类号： H01L21/67161 , H01L21/6719 , H01L21/67196 , H01L21/67745 , H01L21/68707 , Y10S414/137
摘要： A high speed wafer processing apparatus employs two wafer transport robots to move wafers from two load locks past a processing station with gentle vacuum cycling and without pumpdown delays. Both robots alternately transport each wafer from the cassette at a single one of the load locks along a path from the cassette to a transfer position through the process station and back to the cassette, while pumpdown or venting of the other (second) load lock is carried out. They then transport the wafers from the second load lock through the process station. A wafer is "parked" at a transfer or orienting station, rather than handed over from robot to robot, so that the robots are not both tied up with a single wafer, and two or more wafers can move simultaneously along the path. Even for a fast ten second process time, work flow proceeds without interruption, periodic delay or dead time, and three to five minutes are available for venting, loading a new cassette and pumpdown. The robots enjoy partial path overlap, and operate in bucket brigade fashion without stop.
摘要翻译：高速晶片处理装置使用两个晶片传送机器人来从两个加载锁移动晶片通过处理站，具有温和的真空循环并且没有抽空延迟。两个机器人在一个装载锁上的一个装载锁上将每个晶片从盒中交替传送，沿着从盒的路径传递到通过处理站的转移位置并返回到盒，而另一个（第二）装载锁的抽吸或排气是执行。然后，他们将晶片从第二个加载锁传送到处理站。晶片在转移或定位站“停放”，而不是从机器人移交到机器人，使得机器人不会被单个晶片捆绑，并且两个或更多个晶片可以沿着路径同时移动。即使快速十秒的处理时间，工作流程不间断地进行，定期延迟或死区时间，三到五分钟可用于排放，装入新的盒式磁带和抽空。机器人享受部分路径重叠，无需停车就可以进行斗旅。

7. 发明授权

US07842931B2 Extraction electrode manipulator 有权
标题翻译：提取电极机械手
公开(公告)号：US07842931B2
公开(公告)日：2010-11-30
申请号：US12238265
申请日：2008-09-25
申请人： Shu Satoh , John Adamik , Manny Sieradzki
发明人： Shu Satoh , John Adamik , Manny Sieradzki
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J27/024 , H01J37/023 , H01J37/04 , H01J37/067 , H01J37/15 , H01J37/3171 , H01J2237/002 , H01J2237/0213 , H01J2237/0458 , H01J2237/08 , H01J2237/083 , H01J2237/31701
摘要： An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.
摘要翻译：一种提取电极操纵器系统，包括离子源，抑制电极和接地电极，其中两个电极由同轴布置的两个水冷支撑管支撑。高压绝缘体环位于同轴支撑管系统的另一端，用作内管的机械支撑件，也用作高压真空馈通，以防止溅射和涂覆绝缘表面。

8. 发明申请

US20100072402A1 EXTRACTION ELECTRODE MANIPULATOR 有权
标题翻译：提取电极操作器
公开(公告)号：US20100072402A1
公开(公告)日：2010-03-25
申请号：US12238265
申请日：2008-09-25
申请人： Shu Satoh , John Adamik , Manny Sieradzki
发明人： Shu Satoh , John Adamik , Manny Sieradzki
IPC分类号： H01J37/08 , H01J27/00
CPC分类号： H01J37/08 , H01J27/024 , H01J37/023 , H01J37/04 , H01J37/067 , H01J37/15 , H01J37/3171 , H01J2237/002 , H01J2237/0213 , H01J2237/0458 , H01J2237/08 , H01J2237/083 , H01J2237/31701
摘要： An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.
摘要翻译：一种提取电极操纵器系统，包括离子源，抑制电极和接地电极，其中两个电极由同轴布置的两个水冷支撑管支撑。高压绝缘体环位于同轴支撑管系统的另一端，用作内管的机械支撑件，也用作高压真空馈通，以防止溅射和涂覆绝缘表面。

9. 发明申请

US20090321657A1 SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY 有权
标题翻译：控制广播光束均匀性的系统和方法
公开(公告)号：US20090321657A1
公开(公告)日：2009-12-31
申请号：US12145713
申请日：2008-06-25
申请人： Shu Satoh , Edward C. Eisner , Manny Sieradzki
发明人： Shu Satoh , Edward C. Eisner , Manny Sieradzki
IPC分类号： H01J27/02 , H01J27/00
CPC分类号： H01J37/05 , H01J37/304 , H01J37/3171 , H01J2237/006 , H01J2237/057 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/31703
摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.
摘要翻译：一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分，用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

10. 发明申请

US20090321625A1 Ion Implanter Having Combined Hybrid and Double Mechanical Scan Architecture 有权
标题翻译：具有混合和双机械扫描架构的离子机
公开(公告)号：US20090321625A1
公开(公告)日：2009-12-31
申请号：US12554277
申请日：2009-09-04
申请人： Manny Sieradzki , Patrick Splinter , Bo H. Vanderberg
发明人： Manny Sieradzki , Patrick Splinter , Bo H. Vanderberg
IPC分类号： H01J49/26
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译：提供了一种用于在多个工作范围内将离子注入工件的系统和方法。提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束被位于质量分析器下游的束扫描系统扫描，并由位于光束扫描系统下游的并联器。在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式