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1. 发明申请

US20070108390A1 Technique for Shaping a Ribbon-Shaped Ion Beam 有权
标题翻译：形成带状离子束的技术
公开(公告)号：US20070108390A1
公开(公告)日：2007-05-17
申请号：US11536992
申请日：2006-09-29
申请人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
发明人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
IPC分类号： H01J37/12
CPC分类号： H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要： A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要翻译：公开了一种用于成形带状离子束的技术。在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形带状离子束。

2. 发明申请

US20070164229A1 Technique for providing a segmented electrostatic lens in an ion implanter 有权
标题翻译：在离子注入机中提供分段静电透镜的技术
公开(公告)号：US20070164229A1
公开(公告)日：2007-07-19
申请号：US11413570
申请日：2006-04-28
申请人： Svetlana Radovanov , Anthony Renau , James Buff
发明人： Svetlana Radovanov , Anthony Renau , James Buff
IPC分类号： H01J3/14
CPC分类号： H01J37/12 , H01J37/3171
摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
摘要翻译：公开了一种在离子注入机中提供分段静电透镜的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。透镜还可以包括偏压在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括多个段，所述多个段被独立地偏置以操纵离子束的能量和形状。

3. 发明申请

US20120111834A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120111834A1
公开(公告)日：2012-05-10
申请号：US13353993
申请日：2012-01-19
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： B44C1/22 , H01L21/02 , H05H1/24 , C23C16/50 , C23C16/52
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

4. 发明申请

US20100255665A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100255665A1
公开(公告)日：2010-10-07
申请号：US12644103
申请日：2009-12-22
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

5. 发明授权

US08101510B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08101510B2
公开(公告)日：2012-01-24
申请号：US12644103
申请日：2009-12-22
申请人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , Svetlana Radovanov , Anthony Renau , Vikram Singh
IPC分类号： H01L21/26 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角到工件。

6. 发明授权

US08357912B2 Techniques for providing a multimode ion source 有权
标题翻译：提供多模离子源的技术
公开(公告)号：US08357912B2
公开(公告)日：2013-01-22
申请号：US12708216
申请日：2010-02-18
申请人： Svetlana Radovanov , Bon-Woong Koo , Frank Sinclair , Victor Benveniste
发明人： Svetlana Radovanov , Bon-Woong Koo , Frank Sinclair , Victor Benveniste
IPC分类号： H01J37/08
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译：公开了提供多模离子源的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

7. 发明申请

US20090121122A1 TECHNIQUES FOR MEASURING AND CONTROLLING ION BEAM ANGLE AND DENSITY UNIFORMITY 审中-公开
标题翻译：测量和控制离子束角度和密度均匀性的技术
公开(公告)号：US20090121122A1
公开(公告)日：2009-05-14
申请号：US11939173
申请日：2007-11-13
申请人： Peter L. Kellerman , Kenneth Purser , Svetlana Radovanov , Victor M. Benveniste , Frank Sinclair , John Slocum
发明人： Peter L. Kellerman , Kenneth Purser , Svetlana Radovanov , Victor M. Benveniste , Frank Sinclair , John Slocum
IPC分类号： H01J37/08 , G01D18/00
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/024 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/30472 , H01J2237/31703
摘要： Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.
摘要翻译：公开了用于测量和控制离子束角度和密度均匀性的技术。在一个特定的示例性实施例中，技术可以被实现为用于测量和控制离子束角度和密度均匀性的装置。该装置可以包括具有开口，杯子和在杯后部的至少一个收集器的测量组件。该装置还可以包括致动器，以沿着致动路径移动测量组件以扫描离子束以测量和控制离子束均匀性。

8. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

9. 发明申请

US20090121149A1 TECHNIQUES FOR SHAPING AN ION BEAM 审中-公开
标题翻译：形成离子束的技术
公开(公告)号：US20090121149A1
公开(公告)日：2009-05-14
申请号：US11937849
申请日：2007-11-09
申请人： Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
发明人： Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
IPC分类号： H01J3/18
CPC分类号： H01J37/1477 , H01J37/12 , H01J37/1475 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , H01J2237/24542 , H01J2237/31701
摘要： Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.
摘要翻译：公开了用于成形离子束的技术。在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。

10. 发明授权

US07888653B2 Techniques for independently controlling deflection, deceleration and focus of an ion beam 有权
标题翻译：用于独立控制离子束的偏转，减速和聚焦的技术
公开(公告)号：US07888653B2
公开(公告)日：2011-02-15
申请号：US12348091
申请日：2009-01-02
申请人： Peter L. Kellerman , Svetlana Radovanov , Frank Sinclair , Victor M. Benveniste
发明人： Peter L. Kellerman , Svetlana Radovanov , Frank Sinclair , Victor M. Benveniste
IPC分类号： H01J3/14 , H01J49/22 , H01J23/083
CPC分类号： H01J37/1471 , H01J37/12 , H01J37/3171
摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
摘要翻译：公开了用于独立地控制离子束的偏转，减速和聚焦的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦的离子束。

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