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1. 发明授权

US09972711B2 Reduced resistance short-channel InGaAs planar MOSFET 有权
公开(公告)号：US09972711B2
公开(公告)日：2018-05-15
申请号：US14729251
申请日：2015-06-03
申请人： International Business Machines Corporation
发明人： Pranita Kerber , Qiqing C. Ouyang , Alexander Reznicek
IPC分类号： H01L21/365 , H01L29/06 , H01L29/78 , H01L29/201 , H01L29/207 , H01L29/66 , H01L29/20 , H01L29/417
CPC分类号： H01L29/78 , H01L29/20 , H01L29/41783 , H01L29/665 , H01L29/66522 , H01L29/66545 , H01L29/6656 , H01L29/66636
摘要： A metal-oxide-semiconductor field effect transistor (MOSFET) and a method of fabricating a MOSFET are described. The method includes depositing and patterning a dummy gate stack above an active channel layer formed on a base. The method also includes selectively etching the active channel layer leaving a remaining active channel layer, and epitaxially growing silicon doped active channel material adjacent to the remaining active channel layer.

2. 发明授权

US09722044B2 Manufacturing method of semiconductor device with silicon layer containing carbon 有权
公开(公告)号：US09722044B2
公开(公告)日：2017-08-01
申请号：US14990242
申请日：2016-01-07
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Takaaki Tsunomura , Toshiaki Iwamatsu
IPC分类号： H01L29/66 , H01L29/36 , H01L21/365 , H01L21/324 , H01L29/06 , H01L29/786 , H01L21/84 , H01L27/12 , H01L21/265
CPC分类号： H01L29/66537 , H01L21/265 , H01L21/26506 , H01L21/2652 , H01L21/324 , H01L21/8238 , H01L21/84 , H01L27/092 , H01L27/1203 , H01L29/0649 , H01L29/36 , H01L29/66492 , H01L29/66742 , H01L29/7833 , H01L29/78603 , H01L29/78684
摘要： A semiconductor device having an n channel MISFET formed on an SOI substrate including a support substrate, an insulating layer formed on the support substrate and a silicon layer formed on the insulating layer has the following structure. An impurity region for threshold adjustment is provided in the support substrate of a gate electrode so that the silicon layer contains carbon. The threshold value can be adjusted by the semiconductor region for threshold adjustment in this manner. Further, by providing the silicon layer containing carbon, even when the impurity of the semiconductor region for threshold adjustment is diffused to the silicon layer across the insulating layer, the impurity is inactivated by the carbon implanted into the silicon layer. As a result, the fluctuation of the transistor characteristics, for example, the fluctuation of the threshold voltage of the MISFET can be reduced.

3. 发明授权

US09412865B1 Reduced resistance short-channel InGaAs planar MOSFET 有权
标题翻译：降低电阻的短沟道InGaAs平面MOSFET
公开(公告)号：US09412865B1
公开(公告)日：2016-08-09
申请号：US15090868
申请日：2016-04-05
申请人： International Business Machines Corporation
发明人： Pranita Kerber , Qiqing C. Ouyang , Alexander Reznicek
IPC分类号： H01L21/365 , H01L29/78 , H01L29/06 , H01L29/201 , H01L29/207 , H01L29/66
CPC分类号： H01L29/78 , H01L29/20 , H01L29/41783 , H01L29/665 , H01L29/66522 , H01L29/66545 , H01L29/6656 , H01L29/66636
摘要： A metal-oxide-semiconductor field effect transistor (MOSFET) and a method of fabricating a MOSFET are described. The method includes depositing and patterning a dummy gate stack above an active channel layer formed on a base. The method also includes selectively etching the active channel layer leaving a remaining active channel layer, and epitaxially growing silicon doped active channel material adjacent to the remaining active channel layer.
摘要翻译：描述了金属氧化物半导体场效应晶体管（MOSFET）和制造MOSFET的方法。该方法包括在形成在基底上的有源沟道层上沉积和图案化虚拟栅极堆叠。该方法还包括选择性地蚀刻离开剩余的有源沟道层的有源沟道层，以及外延生长与剩余的有源沟道层相邻的掺杂硅的有源沟道材料。

4. 发明授权

US08592810B2 Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film 有权
标题翻译：薄膜，其形成方法以及包含该薄膜的半导体发光元件
公开(公告)号：US08592810B2
公开(公告)日：2013-11-26
申请号：US13500931
申请日：2010-10-07
申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
发明人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi
IPC分类号： H01L21/365
CPC分类号： C23C16/407 , C23C16/308 , C23C16/40 , C23C16/56 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/0262 , H01L33/0087 , H01L33/28
摘要： It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
摘要翻译：本发明的目的是稳定地形成N掺杂的ZnO基化合物薄膜。在本发明中，将含有氮气和氮气的气体与有机金属材料气体一起供给到由微波激发的低电子温度的高密度等离子体中，由此形成N掺杂的ZnO类化合物作为成膜体的基板上的薄膜。

5. 发明申请

US20120146191A1 APPARATUS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR, AND COMPOUND SEMICONDUCTOR MANUFACTURED THEREBY 有权
标题翻译：制造化合物半导体的装置和方法及其制造的化合物半导体
公开(公告)号：US20120146191A1
公开(公告)日：2012-06-14
申请号：US13403571
申请日：2012-02-23
申请人： Hideki YASUHARA , Akira BANDOH
发明人： Hideki YASUHARA , Akira BANDOH
IPC分类号： H01L29/20 , H01L21/365 , C23C16/00
CPC分类号： C23C16/4583 , C23C16/303 , C23C16/4584 , C23C16/4585 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： Provided is an apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition including: a reaction container; a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.
摘要翻译：提供一种通过使用金属有机化学气相沉积来制造化合物半导体的装置，包括：反应容器; 要形成成形体的保持器，使得要形成化合物半导体层的成形体的成形表面朝上，保持器布置在反应容器中; 以及从外部将化合物半导体的原料气体供给到反应容器中的材料供给口，其特征在于，所述保持架包括支撑所述成形体的支撑部件，使得所述成形体的下表面与所述保持件的顶面形成身体被放置保持预定的距离。

6. 发明申请

US20120108037A1 METHODS OF FORMING A PHASE CHANGE MATERIAL 有权
标题翻译：形成相变材料的方法
公开(公告)号：US20120108037A1
公开(公告)日：2012-05-03
申请号：US13347919
申请日：2012-01-11
申请人： Keith R. Hampton
发明人： Keith R. Hampton
IPC分类号： H01L21/365 , B82Y40/00
CPC分类号： H01L45/1625 , C23C14/3414 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/165
摘要： A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of at least one of nitrogen and oxygen than the low adhesion phase change material. The phase change material is produced by forming a first chalcogenide compound material including an amount of at least one of nitrogen and oxygen on the dielectric material and forming a second chalcogenide compound including a lower percentage of at least one of nitrogen and oxygen on the first chalcogenide compound material. A phase change random access memory device, and a semiconductor structure are also disclosed.
摘要翻译：一种相变材料，包括形成在电介质材料上的高粘附相变材料和形成在高粘附相变材料上的低粘附相变材料。高粘附相变材料包括比低粘附相变材料更大量的氮和氧中的至少一种。相变材料通过在电介质材料上形成包含一定量的氮和氧的第一硫属化物化合物材料并在第一硫族化物上形成包含较低百分比的氮和氧的至少一种的第二硫族化合物复合材料。还公开了相变随机存取存储器件和半导体结构。

7. 发明授权

US07846819B2 Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures 有权
标题翻译：合成纳米级丝状结构的方法以及包含这种结构的电子部件
公开(公告)号：US07846819B2
公开(公告)日：2010-12-07
申请号：US10574186
申请日：2004-10-12
申请人： Didier Pribat , Jean-Eric Wegrowe , Travis Wade
发明人： Didier Pribat , Jean-Eric Wegrowe , Travis Wade
IPC分类号： H01L21/365 , H01L29/04
CPC分类号： H01L51/0048 , B01J21/04 , B01J21/185 , B01J23/63 , B01J23/83 , B01J35/065 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/18 , C30B29/60 , D01F9/08 , D01F9/12 , H01L21/0242 , H01L21/02527 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02642 , H01L21/02645 , Y10S977/742 , Y10S977/762 , Y10S977/843
摘要： A method of synthesizing electronic components incorporating nanoscale filamentary structures in which method a metallic catalyst is deposited in a nanoporous membrane , the catalyst being adapted to penetrate in at least some of the pores of the nanoporous membrane , and filamentary structures are grown on the catalyst in at least some of the pores in the nanoporous membrane . The nanoporous membrane is prepared in a manner suitable for ensuring that the wall of the pores include a single-crystal zone, and at least part of the catalyst is grown epitaxially on said single-crystal zone.
摘要翻译：一种合成纳米尺度丝状结构的电子部件的方法，其中金属催化剂沉积在纳米多孔膜中的方法，所述催化剂适于在纳米多孔膜的至少一些孔中渗透，并且在催化剂上生长丝状结构纳米多孔膜中的至少一些孔。以适于确保孔的壁包括单晶区的方式制备纳米多孔膜，并且至少部分催化剂在所述单晶区上外延生长。

8. 发明申请

US20100144122A1 Hybrid chemical vapor deposition process combining hot-wire cvd and plasma-enhanced cvd 审中-公开
标题翻译：混合化学气相沉积工艺组合热丝cvd和等离子体增强型cvd
公开(公告)号：US20100144122A1
公开(公告)日：2010-06-10
申请号：US12452544
申请日：2008-07-07
申请人： Xinmin Cao , Xunming Deng , Aarohi Vijh
发明人： Xinmin Cao , Xunming Deng , Aarohi Vijh
IPC分类号： H01L21/365 , C23C16/00
CPC分类号： C23C16/50 , C23C16/24 , C23C16/545 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/0262 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： Hybrid chemical vapor deposition systems for depositing a semiconductor-containing thin film over a substrate comprise a reaction space, a substrate support member configured to permit movement of a substrate in a longitudinal direction and a plasma-generating apparatus disposed in the reaction space and configured to form plasma-excited species of a vapor phase chemical. The systems further comprise a hot wire unit disposed in the reaction space and configured to heat and decompose a vapor phase chemical. The hot wire unit can be a filament. The systems can further comprise an additional reaction space proximate the reaction space. The additional reaction space can comprise a plasma-generating apparatus configured to form plasma-excited species of a vapor phase chemical and a hot wire unit configured to heat and decompose a vapor phase chemical.
摘要翻译：用于在衬底上沉积含半导体的薄膜的混合化学气相沉积系统包括反应空间，构造成允许衬底沿纵向运动的衬底支撑构件和设置在反应空间中的等离子体产生装置，形成等离子体激发的气相化学物质。这些系统还包括设置在反应空间中并被配置为加热和分解气相化学品的热丝单元。热丝单元可以是长丝。该系统可以进一步包括靠近反应空间的附加反应空间。附加的反应空间可以包括构造成形成等离子体激发的气相化学物质和被配置为加热和分解气相化学物质的热丝单元的等离子体产生装置。

9. 发明申请

US20090256132A1 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME 有权
标题翻译：包含基于碳的存储元件的存储器单元及其形成方法
公开(公告)号：US20090256132A1
公开(公告)日：2009-10-15
申请号：US12418855
申请日：2009-04-06
申请人： Roy E. Scheuerlein , Alper Ilkbahar , April D. Schricker
发明人： Roy E. Scheuerlein , Alper Ilkbahar , April D. Schricker
IPC分类号： H01L47/00 , H01L21/365
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/1021 , H01L27/285 , H01L51/0048 , Y10S977/712 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/734 , Y10S977/788 , Y10S977/789 , Y10S977/79 , Y10S977/855 , Y10S977/943
摘要： In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.
摘要翻译：根据本发明的方面，提供了一种形成存储单元的方法，所述方法包括在基板上形成操舵元件，以及形成耦合到所述操舵元件的存储元件，其中所述存储元件包括碳基材料具有不超过10个原子层的厚度。可以通过重复进行以下步骤来形成记忆元件：形成碳基材料层，该层具有约一个单层的厚度，并使碳基材料层进行热退火。还描述了其他方面。

10. 发明申请

US20090203194A1 TRANSPARENT CONDUCTIVE FILM DEPOSITION APPARATUS, FILM DEPOSITION APPARATUS FOR CONTINUOUS FORMATION OF MULTILAYERED TRANSPARENT CONDUCTIVE FILM, AND METHOD OF FORMING THE FILM 审中-公开
标题翻译：透明导电膜沉积装置，用于连续形成多层透明导电膜的膜沉积装置及形成膜的方法
公开(公告)号：US20090203194A1
公开(公告)日：2009-08-13
申请号：US11814527
申请日：2006-01-20
申请人： Yoshiaki Tanaka
发明人： Yoshiaki Tanaka
IPC分类号： H01L21/365 , C23C16/54
CPC分类号： H01L31/1884 , C23C16/407 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/54 , H01L21/02554 , H01L21/02576 , H01L21/0262 , Y02E10/541
摘要： Raw materials are economized and a film deposition rate is improved while maintaining film evenness and high film quality.A film deposition apparatus for the continuous formation of a multilayered transparent conductive film is provided which comprises a substrate attachment part, a charging part where evacuation is conducted, a multilayer deposition treatment part comprising two or more deposition treatment parts for forming a transparent conductive film on a substrate by the MOCVD method by reacting an organometallic compound (diethylzinc), diborane, and water in a vapor phase, a substrate takeout part, a substrate detachment part, and a setter return part where the substrate setter is returned to the substrate attachment part. Film deposition is successively conducted while moving a substrate sequentially through the parts to form a multilayered transparent conductive film on the substrate. Each deposition treatment part is equipped with nozzles for spraying the organometallic compound, diborane, and water and with a cooling mechanism for cooling the nozzles.
摘要翻译：节约原材料，提高成膜速度，同时保持膜的均匀性和高的膜质量。提供一种用于连续形成多层透明导电膜的成膜装置，其包括：基板安装部，进行排气的充电部;多个沉积处理部，包括两个以上用于形成透明导电膜的沉积处理部通过MOCVD方法通过气相中的有机金属化合物（二乙基锌），乙硼烷和水反应的底物，基板取出部分，基板分离部分和安装器返回部分，其中基板固定器返回到基板安装部分。在基板顺序移动基板的同时依次进行膜沉积，以在基板上形成多层透明导电膜。每个沉积处理部分都装有用于喷洒有机金属化合物，乙硼烷和水的喷嘴以及用于冷却喷嘴的冷却机构。

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