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31. 发明授权

US07545009B2 Word lines for memory cells 有权
标题翻译：记忆单元的字线
公开(公告)号：US07545009B2
公开(公告)日：2009-06-09
申请号：US11072159
申请日：2005-03-04
申请人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
发明人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
IPC分类号： H01L29/78
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76889 , H01L23/485 , H01L27/10855 , H01L28/84 , H01L28/90 , H01L29/456 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.
摘要翻译：使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。每种难熔金属材料是含有难熔金属和杂质的导电材料。第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

32. 发明申请

US20070166920A1 Transistor gate forming methods and transistor structures 有权
标题翻译：晶体管栅极形成方法和晶体管结构
公开(公告)号：US20070166920A1
公开(公告)日：2007-07-19
申请号：US11716433
申请日：2007-03-08
申请人： Sanh Tang , Gordon Haller , Prashant Raghu , Ravi Iyer
发明人： Sanh Tang , Gordon Haller , Prashant Raghu , Ravi Iyer
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L29/42392 , H01L29/66787
摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.
摘要翻译：晶体管栅极形成方法包括在线路开口内形成金属层，并在金属层的开口内形成填充层。填充层相对于金属层基本上可选择性地蚀刻。晶体管结构包括线路开口，开口内的电介质层，开口内的电介质层上的金属层，以及开口内的金属层上的填充层。如果填充层被金属层的增加的厚度代替，则金属层/填充层组合的内在特性小于否则会存在。本发明至少应用于三维晶体管结构。

33. 发明申请

US20070048941A1 Transistor gate forming methods and transistor structures 有权
公开(公告)号：US20070048941A1
公开(公告)日：2007-03-01
申请号：US11219077
申请日：2005-09-01
申请人： Sanh Tang , Gordon Haller , Prashant Raghu , Ravi Iyer
发明人： Sanh Tang , Gordon Haller , Prashant Raghu , Ravi Iyer
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L29/42392 , H01L29/66787
摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

34. 发明申请

US20060030162A1 Method to avoid threshold voltage shift in thicker dielectric films 失效
公开(公告)号：US20060030162A1
公开(公告)日：2006-02-09
申请号：US11242375
申请日：2005-10-03
申请人： Randhir Thakur , Ravi Iyer , Howard Rhodes
发明人： Randhir Thakur , Ravi Iyer , Howard Rhodes
IPC分类号： H01L21/469
CPC分类号： H01L23/3171 , H01L21/02129 , H01L21/02271 , H01L21/02304 , H01L21/02315 , H01L21/31612 , H01L21/3162 , H01L21/76828 , H01L21/76829 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. A nonconducting region is formed on the semiconductor substrate and active regions are formed on the semiconductor substrate. The active regions are separated by the nonconducting region. A barrier layer and a dielectric layer are deposited over the nonconducting region and over the active regions. Heat is applied to the integrated circuit causing the barrier layer to anneal.

35. 发明申请

US20050161721A1 Word lines for memory cells 有权
标题翻译：记忆单元的字线
公开(公告)号：US20050161721A1
公开(公告)日：2005-07-28
申请号：US11072159
申请日：2005-03-04
申请人： Ravi Iyer , Yongjun Hu , Luan Tran , Brent Gilgen
发明人： Ravi Iyer , Yongjun Hu , Luan Tran , Brent Gilgen
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L23/485 , H01L29/45 , H01L27/108
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76889 , H01L23/485 , H01L27/10855 , H01L28/84 , H01L28/90 , H01L29/456 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.
摘要翻译：使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。每种难熔金属材料是含有难熔金属和杂质的导电材料。第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

36. 发明授权

US06864561B2 Method and apparatus for reducing fixed charge in semiconductor device layers 失效
标题翻译：用于减少半导体器件层中的固定电荷的方法和装置
公开(公告)号：US06864561B2
公开(公告)日：2005-03-08
申请号：US10727889
申请日：2003-12-04
申请人： Ravi Iyer , Randhir P. S. Thakur , Howard E. Rhodes
发明人： Ravi Iyer , Randhir P. S. Thakur , Howard E. Rhodes
IPC分类号： H01L21/316 , H01L23/58 , H01L21/31
CPC分类号： H01L21/02164 , H01L21/02129 , H01L21/02271 , H01L21/31612 , H01L21/31625
摘要： The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices.
摘要翻译：通过使诸如TEOS的有机前体与O 3反应，沉积在半导体器件上的硼磷硅玻璃绝缘膜中的固定电荷被还原。当在高于约480摄氏度的温度下完成时，所得膜中的碳水平似乎降低，导致场晶体管器件的阈值电压更高。

37. 发明授权

US06822303B2 Titanium boride gate electrode and interconnect 失效
标题翻译：硼化钛栅电极和互连
公开(公告)号：US06822303B2
公开(公告)日：2004-11-23
申请号：US10400010
申请日：2003-03-26
申请人： Ravi Iyer
发明人： Ravi Iyer
IPC分类号： H01L2994
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/76895
摘要： A method for use in the fabrication of a gate electrode includes providing a gate oxide layer and forming a titanium boride layer on the oxide layer. An insulator cap layer is formed on the titanium boride layer and thereafter, the gate electrode is formed from the titanium boride layer. A barrier layer may be formed on the oxide layer prior to forming the titanium boride layer with the gate electrode being formed from the barrier layer and the titanium boride layer. Further, a polysilicon layer may be formed on the gate oxide layer prior to forming the titanium boride layer with the gate electrode being formed from the titanium boride layer and the polysilicon layer. Yet further, a polysilicon layer may be formed on the gate oxide layer and a barrier layer formed on the polysilicon layer prior to forming the titanium boride layer. The gate electrode is then formed from the polysilicon layer, the barrier layer, and the titanium boride layer. Similar methods can further be used in the formation of interconnects to connect contact regions. Gate electrode structures and interconnect structures resulting from the methods are also described. Further, in such methods and structures, the titanium boride layer may be a titanium diboride layer or a titanium boride layer having silicon incorporated therein.
摘要翻译：用于制造栅电极的方法包括提供栅极氧化层并在氧化物层上形成硼化钛层。在硼化钛层上形成绝缘体盖层，之后，由硼化钛层形成栅电极。在形成硼化钛层之前，可以在氧化物层上形成阻挡层，其中栅电极由阻挡层和硼化钛层形成。此外，在形成硼化钛层之前，可以在栅极氧化物层上形成多晶硅层，其中栅电极由硼化钛层和多晶硅层形成。此外，在形成硼化钛层之前，可以在栅极氧化物层上形成多晶硅层和在多晶硅层上形成的势垒层。然后，由多晶硅层，阻挡层和硼化钛层形成栅电极。类似的方法可以进一步用于形成互连以连接接触区域。还描述了由该方法产生的栅电极结构和互连结构。此外，在这些方法和结构中，硼化钛层可以是二硼化钛层或其中掺入硅的硼化钛层。

38. 发明授权

US06812160B2 Methods of forming materials between conductive electrical components, and insulating materials 失效
标题翻译：在导电电气部件和绝缘材料之间形成材料的方法
公开(公告)号：US06812160B2
公开(公告)日：2004-11-02
申请号：US09976624
申请日：2001-10-12
申请人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
发明人： Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
IPC分类号： H01L2131
CPC分类号： H01L21/7682 , H01L21/02115 , H01L21/02118 , H01L21/02167 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02362 , H01L21/31695 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/12014 , Y10T428/24149 , Y10T428/249921 , Y10T428/25 , Y10T428/259 , H01L2924/00
摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.
摘要翻译：在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

39. 发明授权

US06809025B2 Method of making a void-free aluminum film 失效
标题翻译：制造无空隙铝膜的方法
公开(公告)号：US06809025B2
公开(公告)日：2004-10-26
申请号：US10375484
申请日：2003-02-27
申请人： Gurtej S. Sandhu , Ravi Iyer
发明人： Gurtej S. Sandhu , Ravi Iyer
IPC分类号： H01L214763
CPC分类号： H01L23/53223 , H01L21/76847 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A method for depositing an aluminum film limits the growth of voids and notches in the aluminum film and forms and aluminum film with a reduced amount of voids and notches. The first step of the method is to form an underlying layer upon which is deposited an aluminum film having a first thickness. The surface of the aluminum film is then exposed to a passivation species which coats the aluminum grains and precipitates at the grain boundaries so as to prevent grain movement. The exposure of the aluminum film to the passivation species reduces void formation and coalescence of the voids. An aluminum layer having a second thickness is then deposited over the initially deposited aluminum layer. In a second embodiment of the invention, the passivation species is deposited with MOCVD and to form an electromigration-resistant alloy. A third embodiment involves multiple depositions of aluminum, with exposure to a passivation species conducted after each deposition. Each deposition is also conducted at a successively lower temperature than the prior deposition.
摘要翻译：铝膜的沉积方法限制了铝膜中的空隙和凹口的生长，并形成了具有减少量的空隙和凹口的铝膜。该方法的第一步是形成下层，沉积具有第一厚度的铝膜。然后将铝膜的表面暴露于钝化物质，其涂覆铝颗粒并在晶界处沉淀，以防止颗粒移动。铝膜暴露于钝化物质可以减少空隙的形成和孔隙的聚结。然后在初始沉积的铝层上沉积具有第二厚度的铝层。在本发明的第二个实施方案中，钝化物质用MOCVD沉积并形成耐电迁移合金。第三个实施例涉及铝的多次沉积，暴露于在每次沉积之后进行的钝化物质。每次沉积也在比先前的沉积相继低的温度下进行。

40. 发明授权

US06653234B2 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US06653234B2
公开(公告)日：2003-11-25
申请号：US10011134
申请日：2001-12-07
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L2144
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma-sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3-) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits on a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500° C.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。该反应在由大于10KHz的射频源产生的等离子体环境中进行。获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。钛金属沉积在晶片或其它基底上，其已被加热到200-500℃的优选范围内。

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