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    • 1. 发明授权
    • Data modulating device and method thereof
    • 数据调制装置及其方法
    • US08365035B2
    • 2013-01-29
    • US12689100
    • 2010-01-18
    • Masaaki Hara
    • Masaaki Hara
    • H04L1/18H03M13/00
    • H03M13/1111H03M5/145H03M13/15H03M13/1515H03M13/2906H03M13/63
    • A data modulating device includes: an LDPC encoding unit configured to execute LDPC encoding; and a balance encoding unit configured to input a data string subjected to encoding by the LDPC encoding unit as data to be encoded, and convert k bits of this data to be encoded into balance code made up of m-bit block data; with the balance encoding unit executing balance encoding of said data to be encoded using a data conversion table subjected to mapping so that a set of the k-bit data patterns of which the Hamming distance is 1 corresponds to a set of block data of which the Hamming distance is 2.
    • 数据调制装置包括:LDPC编码单元,被配置为执行LDPC编码; 以及平衡编码单元,被配置为将经过LDPC编码单元的编码的数据串输入作为要编码的数据,并将要编码的该数据的k位转换成由m位块数据构成的平衡码; 其中平衡编码单元使用经过映射的数据转换表执行要编码的所述数据的平衡编码,使得汉明距离为1的一组k位数据模式对应于一组块数据,其中 汉明距离为2。
    • 3. 发明授权
    • Semiconductor storage device, electronic apparatus, and mode setting method
    • 半导体存储装置,电子装置和模式设定方法
    • US08341307B2
    • 2012-12-25
    • US12822028
    • 2010-06-23
    • Kenichi Nakanishi
    • Kenichi Nakanishi
    • G06F3/00
    • G11C7/1045
    • Disclosed herein is a semiconductor storage device operable in a plurality of operation modes each having a separate maximum current consumption. The device includes: a data communication section configured to be capable of performing data communication in a plurality of communication modes; an attribute information storage section configured to store attribute information indicating the operation and communication modes; and a mode setting section configured to set the device to one of the operation modes and one of the communication modes. The data communication section transmits, to an electronic apparatus to which the device is attached, the information and receives from the apparatus a mode setting command for directing that the device be set to a combination of an operation mode and a communication mode selected from among the information. In accordance therewith, the mode setting section sets the device to the selected combination of modes.
    • 这里公开了一种半导体存储装置,其可以以各自具有单独的最大电流消耗的多种操作模式操作。 该装置包括:数据通信部,被配置为能够以多种通信模式进行数据通信; 属性信息存储部,被配置为存储表示操作和通信模式的属性信息; 以及模式设置部分,被配置为将所述设备设置为所述操作模式之一和所述通信模式之一。 所述数据通信部将所述信息发送到所述装置所附接的电子装置,并从所述装置接收用于指示将所述装置设定为从所述装置中选择的操作模式和通信模式的组合的模式设定指令 信息。 根据此,模式设置部分将设备设置为所选择的模式组合。
    • 4. 发明授权
    • Digital-to-analog converter, analog-to-digital converter, and semiconductor device
    • 数模转换器,模拟 - 数字转换器和半导体器件
    • US08339300B2
    • 2012-12-25
    • US13098206
    • 2011-04-29
    • Go AsayamaNoriyuki FukushimaYoshikazu NittaYoshinori MuramatsuKiyotaka Amano
    • Go AsayamaNoriyuki FukushimaYoshikazu NittaYoshinori MuramatsuKiyotaka Amano
    • H03M1/66
    • H03M1/66H03M1/0863H03M1/123H03M1/34H03M1/56H03M1/664H03M1/687H03M1/745H03M1/747
    • A DA conversion device includes the following elements. A higher-bit current source cell portion includes uniformly weighted higher-bit current source cells to generate an identical constant current. A lower-bit current source cell portion includes a lower-bit current source cells that are weighted to generate 1/two-to-the-power-of-certain-numbers constant currents. A constant current source selection controller includes a lower-bit controller having a scaler that uses clocks scaled down to 1/two-to-the-power-of-certain-numbers to select the lower-bit current source cells, and a higher-bit controller having shift registers and using a signal indicating a carry bit or a borrow bit used in the lower-bit controller to sequentially activate shift outputs of the shift registers, and uses the shift outputs to select the higher-bit current source cells. Constant current outputs of the selected current source cells are added and output so that an output current corresponding to the digital input signal is obtained.
    • DA转换装置包括以下元件。 较高位的电流源单元部分包括均匀加权的较高位电流源单元以产生相同的恒定电流。 低位电流源单元部分包括被加权以产生特定数目的恒定电流的2/2的功率的低位电流源单元。 恒定电流源选择控制器包括具有缩放器的低位控制器,该定标器使用按比例缩小到1/2到特定数目的功率的时钟来选择低位电流源单元, 位控制器具有移位寄存器并且使用指示在低位控制器中使用的进位位或借位位的信号来顺序地激活移位寄存器的移位输出,并且使用移位输出来选择较高位电流源单元。 添加并输出所选择的电流源单元的恒定电流输出,从而获得与数字输入信号相对应的输出电流。
    • 8. 发明授权
    • Capacitor, method of producing the same, semiconductor device, and liquid crystal display device
    • 电容器及其制造方法,半导体器件和液晶显示装置
    • US08237242B2
    • 2012-08-07
    • US11880551
    • 2007-07-23
    • Kiwamu AdachiSatoshi Horiuchi
    • Kiwamu AdachiSatoshi Horiuchi
    • H01L29/92
    • H01G4/10G02F1/136213H01G4/1254H01G4/20H01G4/33H01L28/40H01L28/56
    • A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.
    • 电容器包括依次层叠的第一电极,电介质层和第二电极。 电介质层具有包含规定数量的氧化铪层和预定数量的氧化钽层的堆叠层结构。 确定子层的数量,材料和厚度,使得厚度比具有这样的范围,其中,在表示第一和第二电极之间的电压与漏电流之间的关系的电压 - 漏电流特性中, 当电流增加的斜率开始不连续地增加时,当预定数量的氧化钽层的总厚度与介电层的总厚度的比例达到3 [MV / cm]以上时的电场强度 变化,厚度比在起始电压在该范围内的范围内。