专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10471566B2 Method for determining location of a lens machining tool in a turning machine configured for machining ophtalmic lenses 有权
公开(公告)号：US10471566B2
公开(公告)日：2019-11-12
申请号：US15502712
申请日：2015-08-07
申请人： ESSILOR INTERNATIONAL (COMPAGNIE GENERALE D'OPTIQUE)
发明人： Xavier Bultez , Jerome Moine , Guillaume Bolteau , Jean-Pierre Chauveau
IPC分类号： B24B49/03 , B23Q17/22 , G05B19/402 , B24B13/06 , B24B13/005 , B24B49/00
摘要： Disclosed is a method for determining location of a lens machining tool (24) having an offset location according to a first direction (Y) smaller than a first predetermined threshold, including the steps of manufacturing a calibration piece (10) according to a predetermined theoretical geometry by using the lens machining tool for providing a at least partially annular groove in a main surface of the calibration piece, the at least partially annular groove being configured to form at least one sharp edge defining a slope discontinuity on the main surface; measuring a distance between the at least one sharp edge and a turning center of the calibration piece for providing data of geometrical characteristics of the calibration piece; and deducing from the measured data a location of the lens machining tool according to a second direction (X) distinct from the first direction.

2. 发明授权

US10399203B2 Polishing method and polishing apparatus 有权
公开(公告)号：US10399203B2
公开(公告)日：2019-09-03
申请号：US15304829
申请日：2015-04-10
申请人： EBARA CORPORATION
发明人： Yoichi Kobayashi , Keita Yagi , Masaki Kinoshita , Yoichi Shiokawa
IPC分类号： B24B49/05 , B24B49/02 , B24B49/04 , B24B37/013 , B24B37/10 , B24B37/32 , B24B37/34 , H01L21/66 , B24B49/03 , B24B49/12 , H01L21/67
摘要： The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

3. 发明授权

US09975212B1 Grinding system with spool apparatus for supplying wire from a spool during grinding 有权
公开(公告)号：US09975212B1
公开(公告)日：2018-05-22
申请号：US14676236
申请日：2015-04-01
申请人： GLEBAR ACQUISITION, LLC
发明人： Robert C. Gleason , John Bannayan
IPC分类号： B24B41/00 , B24B5/38 , B24B49/03 , B24B49/12
CPC分类号： B24B5/38 , B24B41/005 , B24B49/03 , B24B49/12
摘要： A spool-fed grinding system includes a spooling system, a grinding machine, and a computer controller. The spooling mechanism includes a spool assembly from which wire is unwound, with the spool assembly having an axis of rotation on which a spool spins to unwind the wire. The grinding machine includes a grinding wheel, a linear movement mechanism, and a rotation mechanism. The linear movement mechanism holds and linearly moves the wire along a longitudinal axis during grinding, and the rotation mechanism rotates the wire about the longitudinal axis during grinding. The axis of rotation of the spool and the longitudinal axis generally are not transverse with each other. The computer controller is programmed to control coordinated operation of the spooling mechanisms and the grinding machine, such that the spooling mechanism is controlled to rotate the spool at a same rotation speed as a rotation speed of the wire during grinding.

4. 发明申请

US20090142991A1 Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method 审中-公开
公开(公告)号：US20090142991A1
公开(公告)日：2009-06-04
申请号：US12329745
申请日：2008-12-08
申请人： Do Min Moon
发明人： Do Min Moon
IPC分类号： B24B49/00 , B24B1/00 , B24B49/03
CPC分类号： B24B37/30 , B24B37/042
摘要： A silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method are provided.More particularly, a silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method for correcting a wafer flatness in a final grinding process are provided.The silicon wafer grinding apparatus includes a grinding surface plate having a grinding pad attached thereon; a grinding head arranged opposite to the grinding surface plate and rotated in the same direction as that of the grinding surface plate; a backing film attached at a lower portion of the grinding head for supporting a wafer; and a retainer ring having an inner diameter (a wafer diameter+α) greater than a diameter of the wafer by as much as α and disposed on the backing film.By forming a diameter or physical properties of a part of the backing film of the wafer retaining assembly, the wafer flatness of the final grinding may be corrected.

5. 发明申请

US20090028655A1 DEVICE AND METHOD FOR MACHINING BEVEL GEARS IN THE INDEXING METHOD HAVING COMPLETE INDEXING ERROR COMPENSATION 有权
标题翻译：在具有完整的指标误差补偿的指标方法中加工水平齿轮的装置和方法
公开(公告)号：US20090028655A1
公开(公告)日：2009-01-29
申请号：US12278005
申请日：2007-02-08
申请人： Karl-Martin Ribbeck , Torsten Konig
发明人： Karl-Martin Ribbeck , Torsten Konig
IPC分类号： B23F9/10 , B23F23/10 , B23F23/12 , B24B49/03
CPC分类号： B24B53/085 , B23F17/003 , B23F23/10 , B23F23/1218 , B24B49/03 , Y02P70/175 , Y10T29/49476 , Y10T409/104134 , Y10T409/300896
摘要： The invention relates to an apparatus for machining bevel gears in an indexing method and method for machining the pitch of gears, wherein the production-related pitch error is compensated. The apparatus (20) comprises an interface (11, 12) and can be connected to a measurement system (10) by means of this interface (11, 12). The interface is designed such that the apparatus (20) can take correction values or correction factors from the measurement system (10) in a form in order to be able to adapt master data or neutral data. The data, which was originally present in a memory (51) of the apparatus (20), is corrected on the basis of these correction values or correction factors before production of one or more bevel gears (31) is initiated on the apparatus (20).
摘要翻译：本发明涉及一种用于加工齿轮间距的分度方法和方法来加工锥齿轮的装置，其中生产相关螺距误差被补偿。该装置（20）包括接口（11,12），并可通过该接口（11,12）连接到测量系统（10）。接口被设计成使得装置（20）可以以形式来从测量系统（10）获取校正值或校正因子，以便能够适应主数据或中性数据。原先存在于装置（20）的存储器（51）中的数据在制造在设备（20）上的一个或多个锥齿轮（31）的生产之前，基于这些校正值或校正因子来校正）。

6. 发明申请

US20050153557A1 Apparatus and method for treating susbtrates 有权
标题翻译：用于治疗感染的装置和方法
公开(公告)号：US20050153557A1
公开(公告)日：2005-07-14
申请号：US11036865
申请日：2005-01-13
申请人： Chan-Woo Cho , Jae-Phil Boo , Myung-Seok Kim , Jong-Muk Kang , Ik-Joo Kim , Jung-Hwan Sung , Ki-Hong Jung , Keon-Sik Seo
发明人： Chan-Woo Cho , Jae-Phil Boo , Myung-Seok Kim , Jong-Muk Kang , Ik-Joo Kim , Jung-Hwan Sung , Ki-Hong Jung , Keon-Sik Seo
IPC分类号： B24B37/013 , B24B37/04 , B24B49/03 , H01L21/304 , H01L21/306 , H01L21/302 , H01L21/461
CPC分类号： B24B49/03 , B24B37/013 , B24B37/042
摘要： The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and more particularly to a polishing apparatus having a workpiece transfer robot for transferring a workpiece from one operation to the next. The polishing apparatus according to the present invention comprises a polishing section including a top ring for holding a workpiece to be polished and a turntable having a polishing surface for polishing a surface of the workpiece held by the top ring; a cleaning section including a cleaning device for cleaning the workpiece that has been polished in the polishing section; and a workpiece transfer robot for transferring the workpiece to be polished to the polishing section or for transferring the workpiece that has been polished to the cleaning section. In this case, the workpiece transfer robot comprises a robot body; at least one arm operatively coupled to the robot body by at least one joint; a holder mechanism mounted on the arm for holding the workpiece; and a seal mechanism at the joint for preventing liquid from entering an interior of the joint, the seal mechanism
摘要翻译：本发明涉及一种用于将诸如半导体晶片的工件抛光到平面镜面抛光的抛光装置，更具体地涉及具有用于将工件从一个操作传送到下一个操作的工件传送机器人的抛光装置。根据本发明的抛光装置包括抛光部分，其包括用于保持待抛光工件的顶环和具有抛光表面的转台，用于抛光由顶环保持的工件的表面; 清洁部，其包括用于清洁在所述研磨部中被抛光的所述工件的清洁装置; 以及工件传送机器人，用于将要抛光的工件传送到抛光部分或用于将已抛光的工件传送到清洁部分。在这种情况下，工件传送机器人包括机器人主体; 至少一个臂通过至少一个接头可操作地联接到所述机器人主体; 安装在所述臂上用于保持所述工件的保持器机构; 和密封机构，用于防止液体进入接头的内部，密封机构

7. 发明授权

US5975990A Method of producing semiconductor wafers 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US5975990A
公开(公告)日：1999-11-02
申请号：US759023
申请日：1996-12-02
申请人： Hanifi Malcok
发明人： Hanifi Malcok
IPC分类号： B24B1/00 , B24B7/22 , B24B47/22 , B24B49/03 , B28D1/00 , B28D5/02 , H01L21/304 , B24B49/10
CPC分类号： B28D5/028 , B24B47/22 , B24B49/03 , B24B7/228 , B28D1/003
摘要： A method for producing semiconductor wafers is by a repeated sequence of grinding the end face of a monocrystal using a grinding tool and cutting a semiconductor wafer having a thickness from the monocrystal using a cutting tool, a grinding abrasion of a specified depth being produced during grinding and the semiconductor wafer being cut in a cutting plane which is as parallel as possible to the ground end face. The method includes (a) simultaneously grinding a part of the surface of an auxiliary body, to produce a ground surface of the auxiliary body and the end face of the monocrystal lying substantially in one plane and the thickness of the material abraded from the auxiliary body by grinding being substantially equal to the grinding abrasion; (b) cutting into the auxiliary body in the cutting plane using the cutting tool and producing a cut section which has a ground part and an unground part, and (c) determining the grinding abrasion, either (1) as the distance between the ground surface of the auxiliary body and the surface of the auxiliary body before grinding, or (2) as the difference in the thickness of the cut section in the unground part and the thickness of the semiconductor wafer.
摘要翻译：制造半导体晶片的方法是通过使用研磨工具对单晶的端面进行研磨的重复顺序，并使用切削工具从单晶切割具有厚度的半导体晶片，在研磨期间产生规定深度的研磨磨损并且半导体晶片在切割平面中被切割，切割平面尽可能平行于接地端面。该方法包括：（a）同时研磨辅助体的一部分表面，以产生辅助体的接地表面和基本上在一个平面中的单晶的端面，并且从辅助体磨损的材料的厚度通过磨削基本上等于研磨磨损; （b）使用切割工具在切割平面中切割成辅助体，并产生具有磨削部分和未磨削部分的切割部分，以及（c）确定研磨磨损，（1）作为地面之间的距离研磨前的辅助体的表面和辅助体的表面，或者（2）作为未研磨部的切断部的厚度和半导体晶片的厚度的差。

8. 发明授权

US5816891A Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput 失效
标题翻译：通过在多个抛光压板上顺序移除来执行氧化物和金属的化学机械抛光，以提高设备产量
公开(公告)号：US5816891A
公开(公告)日：1998-10-06
申请号：US789978
申请日：1997-01-28
申请人： Christy M.-C. Woo
发明人： Christy M.-C. Woo
IPC分类号： B24B37/04 , B24B49/03 , B24B49/12 , B24B1/00
CPC分类号： B24B37/04 , B24B49/03 , B24B49/12
摘要： A chemical mechanical polisher is provided comprising multiple polish platens to sequentially remove any fixed amount of oxide or metal on a semiconductor wafer. Each polish platen polishes a fraction of the total oxide removed. Total oxide removal is achieved after completing polishing on all available polish platens assigned for polishing. Reduced oxide removed enables a high oxide removal rate on each polish platen, thus reducing polish time. Sequential polishing on multiple polish platens reduces polish time especially for high oxide removal in the range greater than 0.5 micrometer to greater than 1 micrometer. A higher polish rate and shorter polish time results in shorter polish pad conditioning time. Multiple polish platens coupled with more than one consecutive wafer-carrier head, each following the previous wafer-carrier head in completing sequential polishing, improves machine throughput by eliminating machine idle time caused by events other than actual oxide or metal polishing. The throughput can be further increased by polishing more than one wafer simultaneously at the same polish platen by: (1) employing wafer-carrier heads that hold a set of wafers, (2) providing sets of wafer-carrier heads which follow the same path simultaneously and polish simultaneously at the same polish platen or (3) employing a combination of both methods. The polishing of metals enables use of different polish pad materials and slurry chemistries for each polish platen.
摘要翻译：提供了一种化学机械抛光机，其包括多个抛光压板，以顺序地去除半导体晶片上的任何固定量的氧化物或金属。每个抛光平台抛光除去的总氧化物的一部分。完成抛光后，在抛光所有可用抛光平板上完成氧化物去除。减少氧化物去除能够在每个抛光台板上实现高氧化物去除率，从而减少抛光时间。在多个抛光平台上进行连续抛光可以减少抛光时间，特别是在大于0.5微米至大于1微米的范围内进行高氧化物去除。较高的抛光速率和较短的抛光时间导致较短的抛光垫调理时间。多个抛光压板与多个连续的晶片载体头连接，每个跟随先前的晶片载体头完成顺序抛光，通过消除由实际氧化物或金属抛光以外的事件引起的机器空闲时间来提高机器产量。通过以下方式，在同一抛光台上同时抛光多于一个晶片可以进一步提高生产量：（1）采用保持一组晶片的晶片载体头，（2）提供一组遵循相同路径的晶片载体头在同一抛光台上同时抛光，或（3）采用两种方法的组合。金属的抛光可以为每个抛光台板使用不同的抛光垫材料和浆料化学品。

9. 发明授权

US11574804B2 Workpiece processing and resin grinding apparatus 有权
公开(公告)号：US11574804B2
公开(公告)日：2023-02-07
申请号：US16216394
申请日：2018-12-11
申请人： DISCO CORPORATION
发明人： Shinya Watanabe , Ichiro Yamahata , Katsuhiko Suzuki
IPC分类号： H01L21/02 , H01L21/67 , B24B7/22 , B05C11/10 , B24B49/12 , B24B53/017 , H01L21/78 , H01L21/3105 , H01L21/304 , B24B41/00 , B24B37/00 , B24B49/04 , B24B37/34 , B24B49/02 , B24B7/10 , B24B37/08 , B24B53/007 , B24B49/03 , B24B55/02 , B05B3/00 , B05C9/12
摘要： A processing apparatus used in processing a workpiece having a device in each of a plurality of regions that includes a chuck table holding the workpiece, positioning means positioning the workpiece before grinding, resin coating means including a rotatable spinner table for coating the workpiece with a resin, cleaning means, a grinding unit, and a transfer unit. The transfer unit includes a first transfer unit transferring the workpiece from the positioning means to the spinner table and from the spinner table to the chuck table, a second transfer unit transferring the workpiece from the chuck table to the cleaning means, and a front/back surface inversion transfer unit taking over the workpiece from the cleaning means to the second transfer unit.

10. 发明申请

US20190240799A1 SUBSTRATE PROCESSING CONTROL SYSTEM, SUBSTRATE PROCESSING CONTROL METHOD, AND PROGRAM 审中-公开
公开(公告)号：US20190240799A1
公开(公告)日：2019-08-08
申请号：US16338931
申请日：2017-09-07
申请人： Ebara Corporation
发明人： Koichi TAKEDA , Tsuneo TORIKOSHI , Kunio OISHI , Katsuhide WATANABE , Hozumi YASUDA , Yu ISHII
IPC分类号： B24B37/005 , B24B37/14 , B24B49/03 , B24B49/04 , B24B55/06 , H01L21/304
CPC分类号： B24B37/005 , B24B37/12 , B24B37/14 , B24B49/03 , B24B49/04 , B24B55/06 , H01L21/304
摘要： A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式