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71. 发明授权

US09013792B2 Optical module 有权
标题翻译：光模块
公开(公告)号：US09013792B2
公开(公告)日：2015-04-21
申请号：US13421021
申请日：2012-03-15
申请人： Akira Yahagi , Toshiaki Watanabe
发明人： Akira Yahagi , Toshiaki Watanabe
IPC分类号： G02F1/09 , C30B11/00 , C30B13/00 , C30B15/08 , C30B29/24
CPC分类号： G02F1/093 , C30B11/00 , C30B13/00 , C30B15/08 , C30B29/24 , H01F7/0273
摘要： An optical module is provided that includes a Faraday rotator having a Verdet constant at a wavelength of 1.06 μm of at least 0.27 min/(Oe·cm), a first hollow magnet disposed on the outer periphery of the Faraday rotator, and second and third hollow magnet units disposed so as to sandwich the first hollow magnet on the optical axis. The second and third hollow magnet units include 2 or more magnets equally divided in a direction of 90 degrees relative to the optical axis. A magnetic flux density B (Oe) applied to the Faraday rotator is in the range of 0.5×104≦B≦1.5×104. The Faraday rotator is disposed on a sample length L (cm) in the range of 0.70≦L≦1.10, and has an external diameter D (cm) in the range of 0.20≦D≦0.60.
摘要翻译：提供一种光学模块，其包括具有至少0.27分钟/（Oe·cm）的波长为1.06μm的Verdet常数的法拉第旋转器，设置在法拉第旋转器的外周的第一中空磁体，以及第二和第三中空磁体单元设置成将第一中空磁体夹在光轴上。第二和第三中空磁体单元包括相对于光轴在90度的方向上等分的2个以上的磁体。施加到法拉第旋转器的磁通密度B（Oe）在0.5×104

72. 发明申请

US20130240776A1 LANGASITE-TYPE OXIDE MATERIAL, METHOD FOR PRODUCING SAME, AND RAW MATERIAL USED IN THE PRODUCTION METHOD 有权
标题翻译：氧化硅类材料，其生产方法和生产方法中使用的原材料
公开(公告)号：US20130240776A1
公开(公告)日：2013-09-19
申请号：US13878921
申请日：2011-10-12
申请人： Ko Onodera , Kazushige Tohta , Masato Sato , Akira Yoshikawa , Yuui Yokota
发明人： Ko Onodera , Kazushige Tohta , Masato Sato , Akira Yoshikawa , Yuui Yokota
IPC分类号： H01L41/18 , C30B15/04 , C30B15/08
CPC分类号： H01L41/183 , C04B35/18 , C04B35/195 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3251 , C04B2235/3286 , C04B2235/3289 , C30B15/00 , C30B15/04 , C30B15/08 , C30B29/34 , H01L41/18
摘要： An oxide material having a langasite-type structure having a desired surface condition and a desired outer shape is obtained stably. By adding at least one selected from the group consisting of Ir, Pt, Au, and Rh to a raw material which is a composition used for producing a desired oxide material as an additive element, it is possible to control the wettability between a die portion at a bottom end of a crucible and a melt of the raw material, thereby implementing stable production of the oxide material while controlling the wetting and spread of the melt of the raw material leaked out through a hole of the crucible.
摘要翻译：稳定地得到具有所希望的表面状态和期望的外观的具有硅酸盐型结构的氧化物材料。通过将选自Ir，Pt，Au和Rh中的至少一种添加到作为用于制备所需氧化物材料的组合物作为添加元素的原料中，可以控制模头部分之间的润湿性在坩埚的底端和原料的熔体之间，从而在控制通过坩埚的孔泄漏的原料的熔体的润湿和扩散的同时实现氧化物材料的稳定生产。

73. 发明申请

US20110000423A1 Method for producing fluoride crystal 失效
标题翻译：生产氟化物晶体的方法
公开(公告)号：US20110000423A1
公开(公告)日：2011-01-06
申请号：US12805786
申请日：2010-08-19
申请人： Tsuguo Fukuda , Hirohisa Kikuyama , Tomohiko Satonaga
发明人： Tsuguo Fukuda , Hirohisa Kikuyama , Tomohiko Satonaga
IPC分类号： C30B15/08
CPC分类号： C30B15/08 , C01B9/08 , C30B29/12 , Y10T117/10
摘要： Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.
摘要翻译：提供了能够在非常短的时间内产生氟化物晶体的装置，以及适用于使用该装置生产氟化物晶体的方法。该设备包括一个室，一个窗户材料等，并且被改造成使得它可以从室中排出空气以在那里提供高度的真空度。该装置还包括坩埚，其底部具有穿孔。调整穿孔的毛细管部分以促进晶种与熔体的接触。通过使用该装置，可以在短时间内稳定地生产高质量的氟化物单晶。

74. 发明申请

US20050161638A1 Luminous material for scintillator comprising single crystal of yb mixed crystal oxide 有权
标题翻译：用于闪烁体的发光材料，包括yb混合晶体氧化物的单晶
公开(公告)号：US20050161638A1
公开(公告)日：2005-07-28
申请号：US10509425
申请日：2003-03-25
申请人： Tsuguo Fukuda , Akira Yoshikawa , Takashi Tsuzaki
发明人： Tsuguo Fukuda , Akira Yoshikawa , Takashi Tsuzaki
IPC分类号： G21K4/00 , C09K11/00 , C09K11/78 , C09K11/80 , C30B1/00 , C30B15/00 , C30B15/08 , C30B29/28 , G01T1/20 , G01T1/202 , C09K11/08
CPC分类号： C30B15/08 , C09K11/7769 , C09K11/7774 , C09K11/778 , C30B29/22 , C30B29/28 , G21K4/00
摘要： Disclosed is a luminescent material for scintillators, which comprises a single crystal of an Yb-containing mixed-crystal oxide having a base crystal consisting of a garnet single crystal or a borate single crystal. The oxide single crystal has a composition represented by either one selected from the group consisting of R3Al5O12, R3Ga5O12, Li6R(BO3)3, LaR2Ga3O12 and Gd3R2Ga3O12, wherein R is a mixture of Yb and either one of Y, Gd and Lu. The Yb as an element capable of forming an optically active state called CTS together with a neighboring negative ion (oxygen ion).
摘要翻译：公开了一种用于闪烁体的发光材料，其包含具有由石榴石单晶或硼酸盐单晶构成的基础晶体的含Yb的混合氧化物的单晶。氧化物单晶具有由选自由R 3，R 3，R 2，R 3，R 3， 5/2，5，6，6，6，5，12，，La 2 O 3，Ga 3 O 12和Ga 3 R 2 Ga 其中R是Yb和Y，Gd和Lu中的任一种的混合物。作为能够与相邻的负离子（氧离子）一起形成称为CTS的光学活性状态的元素的Yb。

75. 发明授权

US6072118A Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member 失效
标题翻译：通过将板拉动通过生长构件来生长晶体硅板的方法和装置
公开(公告)号：US6072118A
公开(公告)日：2000-06-06
申请号：US897945
申请日：1997-07-24
申请人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
发明人： Tsuguo Fukuda , Minoru Imaeda , Yuichiro Imanishi
IPC分类号： C30B29/06 , C30B15/00 , C30B15/08 , C30B15/24 , H01L31/04 , C30B15/34 , H01L21/268
CPC分类号： C30B29/06 , C30B15/08 , C30B15/24
摘要： A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要翻译：一种用于生长结晶硅板的方法，包括以下步骤：设置平面生长构件和其中放置硅熔体的生长坩埚，并且在其下侧设置有熔体引出开口，同时至少生长部件的前端部位于拉出口下方，通过拉出口从坩埚抽出熔融液，使拉出的熔融物与生长部件的前端部接触，进一步向下拉熔融物通过生长部件的尖端部分。

76. 发明授权

US06036775A Single crystal-growing method and apparatus 失效
标题翻译：单晶生长方法和装置
公开(公告)号：US06036775A
公开(公告)日：2000-03-14
申请号：US358066
申请日：1999-07-21
申请人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
发明人： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
IPC分类号： C30B15/00 , C30B15/08 , C30B35/00
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
摘要翻译：公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物单晶体向下移动。

77. 发明授权

US5919304A Method and apparatus for producing oxide series single crystals 失效
标题翻译：生产氧化物系列单晶的方法和装置
公开(公告)号：US5919304A
公开(公告)日：1999-07-06
申请号：US702157
申请日：1996-08-23
申请人： Minoru Imaeda , Katsuhiro Imai , Tsuguo Fukuda
发明人： Minoru Imaeda , Katsuhiro Imai , Tsuguo Fukuda
IPC分类号： G02F1/35 , C30B15/00 , C30B15/08 , C30B15/20 , C30B29/30 , G02F1/355 , H01S3/109
CPC分类号： C30B15/08 , C30B15/00 , C30B29/30 , Y10S117/91 , Y10T117/1036 , Y10T117/1044
摘要： When producing an oxide-series single crystal by continuously pulling downwardly by .mu. pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.
摘要翻译：当通过mu拉下法连续拉下来生产氧化物系单晶时，单晶的组成可以通过改变单晶的拉伸速度来适当且快速地控制，以连续地制备具有恒定组成的单晶。优选地，拉伸速度为20-300mm / hr，随着单晶的生长的进行，拉伸速率降低。

78. 发明授权

US4481235A Apparatus and method for manufacturing tape-shaped silicon bodies for solar cells 失效
标题翻译：太阳能电池用带状硅体的制造方法
公开(公告)号：US4481235A
公开(公告)日：1984-11-06
申请号：US531678
申请日：1983-09-13
申请人： Helmut Foell , Bernhard Freienstein , Karl Geim , Josef Grabmaier , Otmar Hintringer
发明人： Helmut Foell , Bernhard Freienstein , Karl Geim , Josef Grabmaier , Otmar Hintringer
IPC分类号： H01L31/04 , B05C9/04 , C30B15/00 , C30B15/08 , B05D5/12 , B05C3/12 , B05D1/18
CPC分类号： C30B15/08 , C30B15/002 , C30B15/007 , B05C9/04 , Y10S118/18
摘要： A method and apparatus for manufacturing tape-shaped silicon bodies for solar cells wherein a tape-shaped reticulate carrier is passed vertically downwardly through a drawing nozzle including a slot which is full of molten silicon. The drawing nozzle is located above the level of molten silicon in a vat containing such molten silicon, and capillary means are provided to deliver the molten silicon from the vat into the drawing nozzle to fill the same with the molten silicon.
摘要翻译：一种用于制造用于太阳能电池的带状硅体的方法和装置，其中带状网状载体垂直向下通过包括充满熔融硅的槽的拉丝喷嘴。绘图喷嘴位于含有这种熔融硅的桶中的熔融硅层的上方，并且提供毛细管装置以将熔融硅从槽中输送到拉伸喷嘴中以与熔融硅填充相同。

79. 发明授权

US4367200A Single crystal manufacturing device 失效
标题翻译：单晶制造装置
公开(公告)号：US4367200A
公开(公告)日：1983-01-04
申请号：US227682
申请日：1981-01-23
申请人： Yoshinori Mimura , Yoshihisa Komazawa , Yasuyuki Okamura
发明人： Yoshinori Mimura , Yoshihisa Komazawa , Yasuyuki Okamura
IPC分类号： C30B15/08 , C30B15/02 , C30B35/00
CPC分类号： C30B15/08 , Y10S117/91 , Y10T117/102 , Y10T117/1036 , Y10T117/1044
摘要： A single crystal manufacturing device, in which there are provided a crucible having a melting part for holding a molten liquid of a raw material and a nozzle part for continuously taking out a predetermined amount of the molten liquid by the action of gravity; a heater for heating the raw material to melt it in the melting part; and temperature control means for heating the nozzle part to take out the molten liquid of the raw material from the nozzle part and for providing as large a thermal gradient as possible in the solid-liquid interface between the molten liquid taken out from the nozzle part and a grown single crystal continuous to the molten liquid.The crucible can be double-structured. A guide pipe filled with fibrous material may be provided between the nozzle and the rollers of the grown single crystal.
摘要翻译：一种单晶体制造装置，其中设置有具有用于保持原料的熔融液体的熔融部分和用于通过重力的作用连续取出预定量的熔融液体的喷嘴部分的坩埚; 用于加热原料以在熔化部分熔化的加热器; 以及温度控制装置，用于加热喷嘴部分以从喷嘴部分取出原料的熔融液体，并且在从喷嘴部分取出的熔融液体与从喷嘴部分取出的熔融液体之间的固 - 液界面中提供尽可能大的热梯度，与熔融液体连续生长的单晶。坩埚可以是双重结构的。填充有纤维材料的引导管可以设置在喷嘴和生长的单晶的辊之间。

80. 发明授权

US4108714A Process for producing plate-shaped silicon bodies for solar cells 失效
标题翻译：制造太阳能电池板状硅体的方法
公开(公告)号：US4108714A
公开(公告)日：1978-08-22
申请号：US659958
申请日：1976-02-20
申请人： Wolfgang Keller , Konrad Reuschel
发明人： Wolfgang Keller , Konrad Reuschel
IPC分类号： B22D11/06 , C01B33/02 , C30B15/00 , C30B15/08 , C30B15/24 , C30B29/06 , H01L21/208 , H01L31/04 , H01L31/18 , B01J17/16 , B01J17/18
CPC分类号： C30B15/24 , C30B15/002 , C30B15/08 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S117/90 , Y10S117/914
摘要： Molten silicon is controllably fed into a nip between spaced-apart rollers, converted into a wide ribbon of a desired thickness by passing through such nip and then solidified. The solidified silicon ribbon is then severed into plate-shaped bodies of desired dimension for use in the manufacture of solar cells.
摘要翻译：熔融硅可控地进料到间隔开的辊之间的辊隙中，通过穿过这种辊隙然后固化而转变成所需厚度的宽带。然后将固化的硅带切割成用于制造太阳能电池的所需尺寸的板状体。

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